Part Number Hot Search : 
10M15C1 DK124 C20F2 0LZEM8X CTCH114F 5233B ZHCS500 N74ACT
Product Description
Full Text Search

MRF9060LR1 - RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

MRF9060LR1_306090.PDF Datasheet

 
Part No. MRF9060LR1 MRF9060LR108
Description RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

File Size 355.88K  /  11 Page  

Maker


Freescale Semiconductor, Inc



JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: MRF9060LR1
Maker: FREESCAL..
Pack: 高频管
Stock: Reserved
Unit price for :
    50: $47.31
  100: $44.94
1000: $42.58

Email: oulindz@gmail.com

Contact us

Homepage http://www.freescale.com
Download [ ]
[ MRF9060LR1 MRF9060LR108 Datasheet PDF Downlaod from Datasheet.HK ]
[MRF9060LR1 MRF9060LR108 Datasheet PDF Downlaod from Maxim4U.com ] :-)


[ View it Online ]   [ Search more for MRF9060LR1 ]

[ Price & Availability of MRF9060LR1 by FindChips.com ]

 Full text search : RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET


 Related Part Number
PART Description Maker
MTM8N35 MTM8N40 MTH8N40 MTH8N35 (MTH8N35 / MTH8N40) Power Field Effect Transistor
Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS
Motorola Semiconductor
MOTOROLA[Motorola, Inc]
MTM12P10 MTP12P06 MTP12P10 POWER FIELD EFFECT TRANSISTOR 12 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
(MTP12P06 / MTP12P10) POWER FIELD EFFECT TRANSISTOR
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
PSMN005-75P PSMN005-75B PSMN005_75P_75B-01 N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. 75 A, 75 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
From old datasheet system
N-channel enhancement mode field-effect transistor
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
SSM5P05FU Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
Toshiba Semiconductor
PTF080601F PTF080601E PTF080601A PTF080601 LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦,860-960兆赫
LDMOS RF Power Field Effect Transistor 60 W 860-960 MHz
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
INFINEON[Infineon Technologies AG]
MTD1N40 POWER FIELD EFFECT TRANSISTOR
Motorola, Inc
MRF6522-70 MRF6522-70R306 MRF6522-70R3 RF Power Field Effect Transistor
http://
Freescale Semiconductor, Inc
MRF6S21050LR3 MRF6S21050LSR3 RF Power Field Effect Transistors
Freescale (Motorola)
Freescale Semiconductor, Inc
MRF8S7120NR3 RF Power Field Effect Transistor
Motorola
MRF19085 MRF19085LR3 MRF19085LSR3 RF Power Field Effect Transistors
Freescale Semiconductor, Inc
 
 Related keyword From Full Text Search System
MRF9060LR1 Technolog MRF9060LR1 phase MRF9060LR1 mosfet MRF9060LR1 Bus MRF9060LR1 Hex
MRF9060LR1 MARKING MRF9060LR1 bridge MRF9060LR1 number MRF9060LR1 Bipolar MRF9060LR1 Dropout
 

 

Price & Availability of MRF9060LR1

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.23055195808411